[CPU Unit Count]
Number Of Processor Packages (Physical): 1
Number Of Processor Cores: 4
Number Of Logical Processors: 8
Intel Core i7-2670QM
[General Information]
Processor Name: Intel Core i7-2670QM
Original Processor Frequency: 2200.0 MHz
Original Processor Frequency [MHz]: 2200
CPU ID: 000206A7
CPU Brand Name: Intel(R) Core(TM) i7-2670QM CPU @ 2.20GHz
CPU Vendor: GenuineIntel
CPU Stepping: D2
CPU Code Name: Sandy Bridge-MB SV
CPU Technology: 32 nm
CPU S-Spec: SR02N
CPU Thermal Design Power (TDP): 45.0 W
CPU IA Cores Thermal Design Current (TDC): 97.5 A
CPU GT Cores Thermal Design Current (TDC): 32.5 A
CPU Power Limits (Max): Power = 72.00 W, Time = 64.00 sec
CPU Power Limit 1 - Long Duration: Power = 45.00 W, Time = 28.00 sec [Unlocked]
CPU Power Limit 2 - Short Duration: Power = 45.00 W, Time = Unlimited [Unlocked]
CPU Max. Junction Temperature (Tj,max): 100 °C
CPU Type: Production Unit
CPU Platform: Socket G2 (rPGA988B)
Microcode Update Revision: 25
Number of CPU Cores: 4
Number of Logical CPUs: 8
[Operating Points]
CPU LFM (Minimum): 800.0 MHz = 8 x 100.0 MHz
CPU HFM (Base): 2200.0 MHz = 22 x 100.0 MHz
CPU Turbo Max: 3100.0 MHz = 31 x 100.0 MHz [Locked]
Turbo Ratio Limits: 31x (1c), 30x (2c), 28x (3-4c)
CPU Current: 2394.8 MHz = 24 x 99.8 MHz @ 1.1409 V
CPU Bus Type: Intel Direct Media Interface (DMI) v2.0
Maximum DMI Link Speed: 5.0 GT/s
Current DMI Link Speed: 5.0 GT/s
[Cache and TLB]
L1 Cache: Instruction: 4 x 32 KBytes, Data: 4 x 32 KBytes
L2 Cache: Integrated: 4 x 256 KBytes
L3 Cache: 6 MBytes
[Standard Feature Flags]
[Extended Feature Flags]
[Enhanced Features]
[CPU SNB Features]
[Memory Ranges]
[MTRRs]
Memory
[General information]
Total Memory Size: 8 GBytes
Total Memory Size [MB]: 8192
[Current Performance Settings]
Maximum Supported Memory Clock: 666.7 MHz
Current Memory Clock: 665.2 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 9-9-9-24
Memory Runs At: Dual-Channel
Command Rate: 1T
Read to Read Delay (tRD_RD) Different Rank: 1T
Read to Read Delay (tRD_RD) Different DIMM: 3T
Write to Write Delay (tWR_WR) Different Rank: 3T
Write to Write Delay (tWR_WR) Different DIMM: 3T
Read to Write Delay (tRD_WR) Same Rank: 3T
Read to Write Delay (tRD_WR) Different Rank: 3T
Read to Write Delay (tRD_WR) Different DIMM: 3T
Write to Read Delay (tWR_RD) Same Rank (tWTR): 5T
Write to Read Delay (tWR_RD) Different Rank: 1T
Write to Read Delay (tWR_RD) Different DIMM: 1T
Read to Precharge Delay (tRTP): 5T
Write to Precharge Delay (tWTP): 21T
Write Recovery Time (tWR): 10T
RAS# to RAS# Delay (tRRD): 4T
Refresh Cycle Time (tRFC): 107T
Four Activate Window (tFAW): 20T
Row: 0 - 4 GB PC3-10600 DDR3 SDRAM Nanya Technology NT4GC64B8HB0NS-CG
[General Module Information]
Module Number: 0
Module Size: 4 GBytes
Memory Type: DDR3 SDRAM
Module Type: SO-DIMM
Memory Speed: 666.7 MHz (DDR3-1333 / PC3-10600)
Module Manufacturer: Nanya Technology
Module Part Number: NT4GC64B8HB0NS-CG
Module Revision: 0
Module Serial Number: 286975368
Module Manufacturing Date: Year: 2011, Week: 11
Module Manufacturing Location: 19
SDRAM Manufacturer: Nanya Technology
Error Check/Correction: None
[Module characteristics]
Row Address Bits: 15
Column Address Bits: 10
Number Of Banks: 8
Module Density: 2048 Mb
Number Of Ranks: 2
Device Width: 8 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
[Module timing]
Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
CAS# Latencies Supported: 5, 6, 7, 8, 9
Minimum CAS# Latency Time (tAAmin): 13.125 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns
Minimum Row Precharge Time (tRPmin): 13.125 ns
Minimum Active to Precharge Time (tRASmin): 36.000 ns
Supported Module Timing at 666.7 MHz: 9-9-9-24
Supported Module Timing at 600.0 MHz: 8-8-8-22
Supported Module Timing at 533.3 MHz: 7-7-7-20
Supported Module Timing at 466.7 MHz: 7-7-7-17
Supported Module Timing at 400.0 MHz: 6-6-6-15
Supported Module Timing at 333.3 MHz: 5-5-5-12
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin): 160.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
[Features]
Partial Array Self Refresh (PASR): Not Supported
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Supported
Extended Temperature 1X Refresh Rate: Not Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Pseudo Target Row Refresh (pTRR): Not Supported
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Row: 2 - 4 GB PC3-10600 DDR3 SDRAM Samsung M471B5273CH0-CH9
[General Module Information]
Module Number: 2
Module Size: 4 GBytes
Memory Type: DDR3 SDRAM
Module Type: SO-DIMM
Memory Speed: 666.7 MHz (DDR3-1333 / PC3-10600)
Module Manufacturer: Samsung
Module Part Number: M471B5273CH0-CH9
Module Revision: 0
Module Serial Number: 3086550209
Module Manufacturing Date: Year: 2012, Week: 1
Module Manufacturing Location: 2
SDRAM Manufacturer: Samsung
Error Check/Correction: None
[Module characteristics]
Row Address Bits: 15
Column Address Bits: 10
Number Of Banks: 8
Module Density: 2048 Mb
Number Of Ranks: 2
Device Width: 8 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
[Module timing]
Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
CAS# Latencies Supported: 5, 6, 7, 8, 9
Minimum CAS# Latency Time (tAAmin): 13.125 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns
Minimum Row Precharge Time (tRPmin): 13.125 ns
Minimum Active to Precharge Time (tRASmin): 36.000 ns
Supported Module Timing at 666.7 MHz: 9-9-9-24
Supported Module Timing at 600.0 MHz: 8-8-8-22
Supported Module Timing at 533.3 MHz: 7-7-7-20
Supported Module Timing at 466.7 MHz: 7-7-7-17
Supported Module Timing at 400.0 MHz: 6-6-6-15
Supported Module Timing at 333.3 MHz: 5-5-5-12
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin): 160.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
[Features]
Partial Array Self Refresh (PASR): Not Supported
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Not Supported
Extended Temperature 1X Refresh Rate: Not Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Pseudo Target Row Refresh (pTRR): Not Supported
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Intel HD Graphics 3000
[Video chipset]
Video Chipset: Intel HD Graphics 3000
Video Chipset Codename: Sandy Bridge GT2
Video Memory: 2108 MBytes
[Video Card]
Video Card: Intel Sandy Bridge-MB GT2 - Integrated Graphics Controller [D2/J1/Q0] [Samsung Electronics]
Video Bus: Integrated
Video RAMDAC: Integrated RAMDAC
Video BIOS Version: 2098-01 Veyron-R Europa-R Amor PC 14.34
[Performance]
Processor Clock: 648.6 MHz
Memory Clock: 665.0 MHz
Hardware ID: PCI\VEN_8086&DEV_0116&SUBSYS_C0C1144D&REV_09
PCI Location (Bus:Dev:Fnc): 0:02:0
[Driver Information]
NVIDIA GeForce GT 540M
[Video chipset]
Video Chipset: NVIDIA GeForce GT 540M
Video Chipset Codename: GF108M
Video Memory: 2048 MBytes of DDR3 SDRAM [Samsung]
[Video Card]
Video Card: NVIDIA GeForce GT 540M [Samsung]
Video Bus: PCIe v1.1 x16 (2.5 GT/s) @ x16 (2.5 GT/s)
Video BIOS Version: 70.08.58.00.03
Video Chipset Revision: A1
[Performance]
Processor Clock: 202.5 MHz
Shader Unit Clock: 405.0 MHz
Video Unit Clock: 405.0 MHz
Memory Clock: 324.0 MHz (Effective 648.0 MHz)
Memory Bus Width: 128-bit
Number Of ROPs: 4
Number Of Unified Shaders: 96
Number Of TMUs (Texture Mapping Units): 16
ASIC Quality: 74.0 %
NVIDIA SLI Capability: Capable
Hardware ID: PCI\VEN_10DE&DEV_0DF4&SUBSYS_C0C1144D&REV_A1
PCI Location (Bus:Dev:Fnc): 1:00:0
