- 153
- 3
- CPU
- Intel i7-920
- Scheda Madre
- MSI Eclipse SLI
- HDD
- SSD Corsair Performance Pro 128 GB + Samsung 500 GB
- RAM
- 6 GB OCZ Platinum 2133 Mhz
- GPU
- ATI Radeon HD4850
- Audio
- Creative Xi-Fi Xtreme
- Monitor
- acer AL1912
- PSU
- 550W
- OS
- Windows 7 64bit
Vendo queste memorie RAM fantastiche per overclocking e gaming, Kingston HyperX 2000Mhz @ 9-9-9-27-1T modello KHX16000D3K3/3GX garantite a vita dal produttore.
Le ram sono perfettamente funzionanti e attualmente montate!
Prezzo: 70€ + SS
Recensione:
EXTREME Overclocking - Kingston HyperX 2GHz DDR3 3GB Triple-Channel Memory Kit Review - Page: 1 - Tweaking PC Hardware To The Max
Dati tecnici:
Storage Temperature -55o C to +100o C
Le ram sono perfettamente funzionanti e attualmente montate!
Prezzo: 70€ + SS
Recensione:
EXTREME Overclocking - Kingston HyperX 2GHz DDR3 3GB Triple-Channel Memory Kit Review - Page: 1 - Tweaking PC Hardware To The Max
Dati tecnici:
DESCRIPTION:
Kingston's KHX16000D3K3/3GX is a triple-channel kit of three 128M x 64-bit 1GB (1024MB) DDR3-2000 CL9
SDRAM (Synchronous DRAM) memory modules, based on eight 128M x 8-bit DDR3 FBGA components per module.
Each module kit supports
SDRAM (Synchronous DRAM) memory modules, based on eight 128M x 8-bit DDR3 FBGA components per module.
Each module kit supports
Intel® XMP (Extreme Memory Profiles). Each module kit has been tested to run at DDR3-
2000MHz at a latency timing of 9-9-9 at 1.65V. The SPDs are programmed to JEDEC standard latency DDR3-1333Mhz
timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V. The JEDEC standard
electrical and mechanical specifications are as follows:
2000MHz at a latency timing of 9-9-9 at 1.65V. The SPDs are programmed to JEDEC standard latency DDR3-1333Mhz
timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V. The JEDEC standard
electrical and mechanical specifications are as follows:
FEATURES:
JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 6,7,8,9
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 9(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset
VDDQ = 1.5V ± 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 6,7,8,9
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 9(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), single sided component
PERFORMANCE:
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 110ns
Row Active Time (tRASmin) 36ns (min.)
Power 1.296 W (operating per module)
UL Rating 94 V - 0
Operating Temperature 0
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 110ns
Row Active Time (tRASmin) 36ns (min.)
Power 1.296 W (operating per module)
UL Rating 94 V - 0
Operating Temperature 0
o C to 85o C
Storage Temperature -55o C to +100o C